diff --git "a/data_all_eng_slimpj/shuffled/split2/finalzzntov" "b/data_all_eng_slimpj/shuffled/split2/finalzzntov" new file mode 100644--- /dev/null +++ "b/data_all_eng_slimpj/shuffled/split2/finalzzntov" @@ -0,0 +1,5 @@ +{"text":"\\section{\n\\usepackage{amssymb}\n\\usepackage{graphicx}\n\\usepackage{wrapfig}\n\n\n\\usepackage{amssymb}\n\\usepackage{graphicx}\n\n\n\\author{G. Fejes T\\'oth}\n\\address{Alfr\\'ed R\\'enyi Institute of Mathematics,\nRe\\'altanoda u. 13-15., H-1053, Budapest, Hungary}\n\\email{gfejes@renyi.hu}\n\n\\title{Finite variations on the isoperimetric problem}\n\\thanks{The English translation of the book ``Lagerungen in der Ebene,\nauf der Kugel und im Raum\" by L\\'aszl\\'o Fejes T\\'oth will be\npublished by Springer in the book series Grundlehren der\nmathematischen Wissenschaften under the title\n``Lagerungen---Arrangements in the Plane, on the Sphere and\nin Space\". Besides detailed notes to the original text the\nEnglish edition contains eight self-contained new chapters\nsurveying topics related to the subject of the book but not\ncontained in it. This is a preprint of one of the new chapters.}\n\n\n\n\\begin{document}\n\n\n\n\n\\begin{abstract}\nThe isoperimetric problem asks for\nthe maximum area of a region of given perimeter. It is natural to consider\nother measurements of a region, such as the diameter and width,\nand ask for the extreme value of one when another\nis fixed. The solution of these problems is known if the competing regions\nare general convex disks, however several of these problems are still open\nif the competing regions are polygons with at most a given number of sides.\nThe present work surveys these problems.\n\n\n\\end{abstract}\n\n\\maketitle\n\n\n\nLet $a$, $p$, $w$, and $d$ denote the area, perimeter, width and diameter\nof a convex disk. Fixing one of these four quantities, what is the infimum\nand the supremum of another one of them? Of course, fixing one quantity and\nasking for the supremum of another one is equivalent to the problem of\nfixing the second quantity and asking for the infimum of the first one.\nThe solution of one half of the twelve problems arising this way is obvious:\nThe answer is either zero or infinity. In the case of the six meaningful\nproblems, we can ask for minima and maxima and for the convex disks\nattaining the optimum.\n\nThe isoperimetric problem asks for the convex disk of maximum area with\ngiven perimeter. Its solution is the circle, which was known already in\nAncient Greece, although a mathematically rigorous proof was obtained\nonly in the 19th century. The solution of the problem on the maximum\nwidth for a given diameter is obvious: The optimal sets are convex disks of\nconstant width. Convex disks of constant width were also characterized by\n{\\sc{Blaschke}} \\cite{Blaschke} as those among domains of a given width\nthat have minimum perimeter, and by {\\sc Rosenthal} and {\\sc Sz{\\'a}sz}\n\\cite{RosenthalSzasz} as those among with a given diameter, that have\nmaximum perimeter. {\\sc{Bieberbach}} \\cite{Bieberbach} proved that among\nall domains of a fixed diameter the one of maximum area is the circular\ndisk, and {\\sc{P\\'al}} \\cite{Pal21} proved that the minimum area of a convex\ndisk with given width is attained by the regular triangle.\n\nAn interesting area of research is to consider these optimum problems\nrestricted to polygons with at most a given number of sides. The\nisoperimetric problem for $n$-gons was solved centuries ago by Zenodorus\n(see \\cite{Blasjo}): Implicitly assuming the existence of a solution, he\nproved that a regular $n$-gon has greater area than all other $n$-gons\nwith the same perimeter. This is expressed in the inequality\n$$p^2\\ge4na\\tan\\frac{\\pi}{n}.$$\nThe theorem of P\\'al solves the problem of minimum area for a given width.\nConcerning the remaining four problems only partial results are known.\n\n{\\sc Reinhardt} \\cite{Reinhardt} considered the problem of maximizing the perimeter\nof a convex $n$-gon with a given diameter and proved that the perimeter $p$ of an $n$-gon\nof diameter $d$ satisfies the inequality\n$$p\\le2n\\sin\\frac{\\pi}{2n}d.$$\nEquality is attained here if and only if $n$ is not a power of 2. This result, together\nwith the characterization of the case of equality, was rediscovered by {\\sc{Larman}} and\n{\\sc{Tamvakis}} \\cite{LarmanTamvakis}, {\\sc{Datta}} \\cite{Datta} and {\\sc{A.~Bezdek}}\nand {\\sc{Fodor}} \\cite{BezdekAFodor00}.\n\nTo describe the polygons for which equality is attained, we start with a convex polygon with an\nodd number of sides such that each vertex is at distance $d$ from the endpoints of the opposite\nside. Replacing each side by a circular arc of radius $d$ centered at the opposite vertex we\nobtain a Reuleaux polygon. If $n$ is not a power of 2, the $n$-gons of diameter $d$ with\nperimeter $2n\\sin(\\pi\/2n)$ are inscribed in a Reuleaux polygon in such a way that every vertex\nof the Reuleaux polygon is a vertex of the polygon, and all sides of the polygon are of equal\nlength. Such polygons are called by {\\sc{Audet}}, {\\sc{Hansen}} and {\\sc{Messine}}\n\\cite{AudetHansenMessine09a} {\\it clipped Reuleaux polygons}, while {\\sc{Mossinghoff}}\n\\cite{Mossinghoff11} uses the term {\\it{Reinhardt polygons}} for them.\n\n\\medskip\n\\centerline {\\immediate\\pdfximage width4cm\n{abb_144a.pdf}\\pdfrefximage \\pdflastximage\\hskip.5truecm\n\\immediate\\pdfximage width4cm\n{abb_144b.pdf}\\pdfrefximage \\pdflastximage}\n\\smallskip{\\centerline{Figure~1}\n\\medskip\n\nConsider a Reuleaux polygon with $m$ vertices. Its diagonals form an $m$-gon which for\n$m>3$ is a star polygon. The sum of the angles of this polygon is $\\pi$, so in order that\nit can accommodate a clipped Reuleaux polygon its angles must be integer multiples of $\\pi\/n$.\nThe clipped Reuleaux polygons were studied by {\\sc{Gashkov}} \\cite{Gashkov07,Gashkov13},\n{\\sc{Mossinghoff}} \\cite{Mossinghoff11} and {\\sc{Hare}} and {\\sc{Mossinghoff}}\n\\cite{HareMossinghoff13,HareMossinghoff19}. For a given $n$, there are clipped Reuleaux\n$n$-gons with $k$-fold rotational symmetry for some divisor $k$ of $n$. Besides these,\ncalled {\\it{periodic}} by Mossinghoff, there may be some others, called {\\it{sporadic}}.\nThe latter name is misleading, since it turned out that the sporadic clipped Reuleaux\npolygons outnumber the periodic ones for almost all $n$. Figure~1 shows a regular and\na sporadic clipped Reuleaux polygon with 30 vertices.\n\nFinding the maximum perimeter of an $n$-gon of given diameter when $n$ is a power of 2\nis difficult. Only the cases of the quadrangle and octagon are solved. The best quadrangle was\ndetermined by {\\sc{Tamvakis}} \\cite{Tamvakis} and rediscovered by {\\sc{Datta}} \\cite{Datta}. The\noctagon's case was settled by {\\sc{Audet, Hansen}} and {\\sc{Messine}} \\cite{AudetHansenMessine07a}.\nTamvakis described a sequence of unit-diameter $n$-gons for $n=2^k$ whose perimeter exceeds that of\nthe regular $n$-gon, and differs from the upper bound $2n\\sin\\frac{\\pi}{2n}$ by $O(n^{-4})$.\nBy improved constructions the difference from the upper bound was reduced to $O(n^{-5})$ by\n{\\sc{Mossinghoff}} \\cite{Mossinghoff06a} and lately to $O(n^{-6})$ by {\\sc{Bingane}} \\cite{Bingane21a}.\n\nCombining the inequality $p\\le2n\\sin\\frac{\\pi}{2n}d$ with the isoperimertic inequality\n$p^2\\ge4n\\tan\\frac{\\pi}{n}a$, {\\sc Reinhardt} \\cite{Reinhardt} obtained the inequality\n$$a\\le\\frac{n}{2}\\cos\\frac{\\pi}{n}\\tan\\frac{\\pi}{2n}d^2$$\nwith equality only for odd $n$ and regular $n$-gons. Thus, for odd $n$, among all $n$-gons\nof a given diameter the regular one has maximum area. Alternative proofs were given by\n{\\sc{Lenz}} \\cite{Lenz56a}, {\\sc{Griffiths}} and {\\sc{Culpin}} \\cite{GriffithsCulpin}, and\n{\\sc{Gashkov}} \\cite{Gashkov85}.\n\nReinhardt proved that for even $n\\ge6$, the optimal $n$-gon is never regular. Alternative\nproofs were given by {\\sc{Sch\\\"affer}} \\cite{Schaffer}, {\\sc{Audet, Hansen}} and {\\sc{Messine}}\n\\cite{AudetHansenMessine08} and {\\sc{Mossinghoff}} \\cite{Mossinghoff06a}. The latter author\nconstructed a sequence of $n$-gons with unit diameter for even $n$ whose area exceeds the\narea of the unit-diameter regular $n$-gon by $O(n^{-2}$), and whose area differs from the\nmaximum area of such $n$-gons by a term of at most $O(n^{-3})$. {\\sc{Bingane}}\n\\cite{Bingane21b} improved {\\sc{Mossighoff}}'s construction without improving\non the order of difference from the maximum area.\n\nThe maximum area of a quadrangle of diameter $d$ is $d^2\/2$. The diagonals of the optimal\nquadrangles are perpendicular and have length $d$. The case\nof the hexagon was solved by {\\sc{Graham}} \\cite{Graham}. He confirmed the conjecture of\n{\\sc{Bieri}} \\cite{Bieri} that the non-regular hexagon shown in Figure 2 is the unique\noptimal solution. He also formulated a conjecture for all even $n\\ge6$, stating that for\nsuch $n$, every optimal $n$-gon's diameter graph consists of an ($n-1$)-cycle with one\nadditional edge emanating from one of the cycle's vertices. Note that the conjecture\nleaves the geometric realization of the best polygon undetermined, subject to an\noptimization problem. Graham's conjecture was confirmed for $n=8$ by {\\sc{Audet, Hansen,\nMessine}}, and {\\sc{Xiong}} \\cite{AudetHansenMessineXiong}, who also solved the\ncorresponding optimization problem, thus determining the best octagon. Subsequently,\nGraham's conjecture was confirmed in general by {\\sc Foster} and {\\sc{Szabo}}\n\\cite{FosterSzabo}. The corresponding optimal polygons for $n=10$ and $n=12$ were\ndetermined by {\\sc{Henrion}} and {\\sc{Messine}} \\cite{HenrionMessine}.\n\n\\medskip\n\\centerline {\\immediate\\pdfximage width4cm\n{abb_143.pdf}\\pdfrefximage \\pdflastximage}\n\\smallskip{\\centerline{Figure~2}}\n\\medskip\n\n{\\sc{Graham}} \\cite{Graham} also asked for the solution of the higher-dimensional analogue of\nthe problem: Which convex $d$-polytope with $n$ vertices and unit diameter has the largest volume?\nFor $n=d+1$ the solution is the regular simplex. {\\sc{Kind}} and {\\sc{Kleinschmidt}}\n\\cite{KindKleinschmidt76} solved the problem for $n=d+2$ and described all the extremal\npolytopes. The case $n=d+3$ was attacked by {\\sc{Klein}} and {\\sc{Wessler}} \\cite{KleinWessler03},\nhowever their proof turned out to be incomplete (cf. {\\sc{Klein}} and {\\sc{Wessler}}\n\\cite{KleinWessler05}), thus, this case is still open.\n\nIn the Russian journal for high school students Quant, {\\sc{Gashkov}} \\cite{Gashkov85} wrote\na small article about the isoperimetrtic problem and its relatives. There he gave a proof of\nReinhard's theorem based on central symmetrization. He used the following facts about\na convex $n$-gon $P$ and its central symmetric image $P^*=\\frac{1}{2}(P-P)$: $P^*$ is\na convex polygon with at most $m\\le2n$ sides and the same width $w$, diameter $d$ and\nperimeter $p$ as $P$. The inradius of $P^*$ is at least $w$ and the circumradius of\n$P^*$ is at least $d$. It follows that\n$$2m\\sin\\frac{\\pi}{2m}d\\ge{p}\\ge{m}\\tan\\frac{\\pi}{m}w.$$\nSince $m\\le2n$, using the monotonicity of the functions $x\\sin\\frac{1}{x}$ and\n$x\\tan\\frac{1}{x}$, we get, on one hand, Reinhardt's inequality for the maximum\nperimeter of an $n$-gon with given diameter, and on the other hand, the new inequality\n$$p\\ge{2n}\\tan\\frac{\\pi}{2n}w.$$\nThe combination of these inequalities yields the inequality\n$$w\\le\\cos\\frac{\\pi}{2n}d$$\nbetween the width and diameter of a convex $n$-gon. Equality is attained in these\ninequalities for every $n\\ge3$ that has an odd factor by a clipped Reuleaux polygon.\n\nGashkov's article remained unnoticed. The last inequality was rediscovered by\n{\\sc{A.~Bezdek}} and {\\sc{Fodor}} \\cite{BezdekAFodor00}, and the inequality between\nperimeter and width by {\\sc Audet}, {\\sc Hansen} and {\\sc Messine}\n\\cite{AudetHansenMessine09a}. These authors also solved the case of the quadrangle for\nboth problems. The octagon of a given diameter with maximum width was determined by\n{\\sc{Audet, Hansen, Messine}} and {\\sc{Ninin}} \\cite{AudetHansenMessineNinin}.\n\nMotivated by a question of Erd\\H{o}s, {\\sc{Vincze}} \\cite{Vincze} studied the problem of finding\nthe maximum perimeter of an equilateral $n$-gon with given diameter. He solved the problem if $n$ is\nnot a power of 2. Of course, this case is an immediate consequence of Reinhardt's theorem. However,\nVincze's argument works without the assumption that the sides have equal length, so it yields an\nalternative proof of Reinhardt's theorem. The case that $n$ is a power of $2>4$ is of similar difficulty\nas the problem for general $n$-gons. The only case solved is the one for the octagon settled by\n{\\sc{Audet, Hansen, Messine}} and {\\sc{Perron}} \\cite{AudetHansenMessinePerron}. {\\sc{Mossinghoff}}\n\\cite{Mossinghoff08} constructed a sequence of equilateral $n$-gons with unit diameter for $n=2^k$,\n$k\\ge4$, and proved that their perimeter differs from the maximum perimeter of such $n$-gons by\na term of at most $O(n^{-4})$. By constructing a differen sequence of polygons {\\sc{Bingane}} and\n{\\sc{Audet}} \\cite{BinganeAudet21a} further improved the lower bound for the optimum perimeter.\n\nThe question about the maximum area of an equilateral $n$-gon with given diameter $d$ is solved for\nall $n$: It is $\\frac{d^2n}{2}\\cos\\frac{\\pi}{n}\\tan\\frac{\\pi}{2n}$, attained only for a regular $n$-gon.\nThis follows from Reinhardt's theorem for odd $n$ and was proved by {\\sc{Audet}} \\cite{Audet17}\nfor even $n$. {\\sc{Bingane}} and {\\sc{Audet}} \\cite{BinganeAudet21b} determined the equilateral octagon of unit diameter\nwith maximum width. They also provided a family of equilateral $n$-gons of unit diameter, for $n=2^s$ with\n$s\\ge4$, whose widths are within $O(n^{-4})$ of the maximum width. It appears that the question about the\nmaximum width of an equilateral polygon with $n=2^k$ sides and a given perimeter has not been studied so far.\n\nBy restricting the class of competing polygons to equilateral polygons some problems with obvious\nsolutions become interesting. The area, perimeter, and diameter of a general unit-width convex $n$-gon\ncan be arbitrarily large. This is still the case for an equilateral polygon with an even number of sides.\nHowever, these quantities are bounded for equilateral convex $n$-gons when the number of sides is odd.\n{\\sc{Audet}} and {\\sc{Ninin}} \\cite{AudetNinin} determined the maximal perimeter, diameter and area\nof an equilateral unit-width convex $n$-gon for every odd $n\\ge3$. The optimal polygon is the same for\nall three problems: For $n=3$ it is an equilateral triangle of side length $\\frac{2}{\\sqrt3}$, and\nfor $n=2k+1\\ge5$ a trapezoid whose non-parallel sides have length equal to $\\frac{2}{\\sqrt3}$,\nand the parallel ones have length $m\\frac{2}{\\sqrt3}$ and $(m-1)\\frac{2}{\\sqrt3}$.\n\nThe papers by {\\sc{Mossinghoff}} \\cite{Mossinghoff06b} and {\\sc{Audet, Hansen}} and {\\sc{Messine}}\n\\cite{AudetHansenMessine07b,AudetHansenMessine09a} contain nice surveys about variations of the\nisoperimetric problem for polygons.\n\n\n\\small{\n","meta":{"redpajama_set_name":"RedPajamaArXiv"}} +{"text":"\\section{\\label{sec:level1}Introduction}\n\nSpin Hall effect (SHE) can be used to produce a pure transverse spin current density ($J_{\\rm s}$) from a longitudinal electrical current density ($J_{\\rm e}$) in heavy metals.~\\cite{Dyakonov1971,Hirsch1999} The pure spin current can be measured using the reciprocal effect, \\textit{i.e.}, the inverse spin Hall effect (ISHE) employing a transverse charge current created from the pure spin current. The spin current can generate a current-induced spin-orbit torque (SOT) in heavy metal\/ferromagnet (HM\/FM) heterostructure for potential application in the efficient manipulation of magnetization at the nanoscale.~\\cite{Liu2011,Liu2012}\nWith sufficiently strong SOT, it is possible to excite magnetization to auto-oscillation for radio frequency generation application~\\cite{Liu2012PRL,VEDemidov2012,Dhananjay2017} or switch the magnetization, move domain walls or skyrmions for efficient memory applications.~\\cite{Liu2012,Miron2014,Liu2012PRL,Debanjan2014} \n\nFor realizing these applications, a large spin Hall angle, $\\theta_{\\rm SH}$ defined as the ratio of the spin current density to the charge current density is desirable. While the value of $\\theta_{\\rm SH}$ in most commonly investigated metal Pt is $\\theta_{\\rm SH}\\leq~0.12$,~\\cite{Ando2008,Liu2011,Azevedo2011,sinova2015rmp}\nrecent results show relatively higher spin Hall angle of $|\\theta_{\\rm SH}| \\leq 0.25$ in Ta,\\cite{Morota2011, Liu2012,Hao2015,Allen2015,Kim2015,Nimi2015,Qiu2014,PDeorani2013,Hahn2013,Velez2016,Emori2013} and of the order of $|\\theta_{\\rm SH}|\\leq0.50$ for W.~\\cite{CFPai2012,Demasius2016Ncomm,Hao2015}\nHowever, these higher values of $\\theta_{\\rm SH}$ in Ta and W are so far reported in very high resistive phase of these materials, which limits several applications that require a charge current to flow in the HM. \n\n\nIn this work, we report a strong correlation of spin Hall angle with the crystalline phase of Ta thin films in Py\/Ta bilayers. The crystalline phase of Ta films is varied by controlling growth rate in sputtering. We develop and demonstrate a simple method for measurement of ISHE using a broadband ferromagnetic resonance (FMR) set-up without involving micro-fabrication. We show that the voltage measured in our optimized set-up primarily arises from ISHE by using out-of-plane angle dependence and radio frequency (RF) power dependence, which rules out voltage signal due to other galvanomagnetic effects such as anisotropic magneto-resistance (AMR) and anomalous Hall effect (AHE). We find a higher spin mixing conductance and spin Hall conductivity ($-2439~(\\hbar\/e)~\\Omega^{-1}$cm$^{-1}$) for \\textit{low resistivity} Ta having mixed crystalline phase, which is promising for applications. The large spin Hall conductivity for mixed crystalline phase Ta is consistent with the extrinsic mechanism of spin Hall effect. \n\n\n\nThe Py($t_{\\rm Py}$ nm)\/Ta(20 nm) bilayer thin films are prepared on Si substrates using DC-magnetron sputtering at a working and base pressure of $2\\times10^{-3}$ and $3\\times10^{-6}$ Torr, respectively. We first studied single layer Ta thin films with different growth rates by varying the DC-sputtering power. Subsequently, Py($t_{\\rm Py}$ nm)\/Ta(20 nm) bilayer thin films were prepared with varying thickness of Py, $t_{\\rm Py}$ and growth rate of Ta. The Ta thickness was kept fixed at 20~nm. Before the deposition of the different layers, pre-sputtering of the targets was performed for 10 min with a shutter. Crystallographic properties of films were determined using X-ray diffraction (XRD) while the thicknesses and interface\/surface roughness were determined from X-ray reflectivity (XRR) technique using a PANalytical X'Pert diffractometer with Cu-K$_{\\alpha}$ radiation. \nThe XRR data (not shown) was fitted using the recursive theory of Parratt.~\\cite{parratt1954}\nFrom XRR fitting the surface and interface roughness were found to be $<$0.5~nm. \n\n\\begin{figure}[t]\n\\centering\n\\includegraphics[width=9cm]{1_v5.pdf}\\\\\n\\caption{(a) X-ray diffraction data for Ta thin films grown at different growth rates ($G_{R}$). The plots are shifted for clarity. The inset shows the resistivity versus $G_{R}$ for Ta thin films having thickness of 20~nm.}\\label{XRD_Ta}\n\\end{figure}\n\nFerromagnetic resonance (FMR) measurements are carried out for excitation frequencies of 4--12 GHz at room temperature. We use a co-planar waveguide (CPW) based broad-band FMR set-up.~\\cite{bansal2018apl}\nFor a fixed excitation frequency of microwave field, external magnetic field ($H$) is swept for the resonance condition. \nThe ISHE measurements are performed on $4\\times3~$mm$^{2}$ samples by measuring voltage signal at the edge of the samples by fabricating 100~$\\mu$m-thick Cu contact pads. This geometry allows us to measure ISHE signal in our samples when the film side is facing the CPW. \n\n\n\\begin{figure} [t!]\n\\centering\n \\includegraphics[width=8.5cm]{2_FMR_v4.pdf}\\\\\n \\caption{(a) Frequency ($f$) \\textit{vs.} resonance field ($H_{r}$) and (b) Linewidth ($\\Delta H$) vs. frequency, $f$ for Py (30 nm)\/Ta (20 nm) with varying phase of Ta obtained by varying the growth rates. The inset in (a) shows an example FMR spectra at 5 GHz for $G_{R}=0.62~\\rm \\AA$\/s. The symbols are measured data while solid lines are fits.}\\label{FMR}\n\\end{figure}\nFigure~\\ref{XRD_Ta} shows the XRD spectra for single layer 50~nm-thick Ta thin films prepared at different growth rates by varying sputtering power in DC magnetron sputtering. \nA broad diffusive peak of $\\alpha$-phase of Ta centered around 2$\\theta = 38.0^\\circ$ is observed for thin films grown at the lowest growth rate of 0.40~\\AA\/s. This peak corresponds to (110) reflection of $\\alpha-$Ta. Bragg peaks corresponding to (002) $\\beta$-Ta and (110) $\\alpha$-Ta are observed for growth rates between 0.62~\\AA\/s and 1.4~\\AA\/s, respectively, which suggest the growth of a mixed ($\\alpha$+$\\beta$) phase of Ta. However, an oriented $\\beta$-phase of Ta is observed for growth rate higher than 1.4 \\AA\/s with Bragg reflections at 2$\\theta$ = 33.6$^\\circ$ corresponding to $\\beta$-Ta (002) reflection. Inset of Fig.~\\ref{XRD_Ta} shows the resistivity measurements on 20 nm Ta thin films grown with varying growth rate, measured using Van der Pauw method. The samples with pure $\\beta$-phase of Ta shows a higher resistivity of about 180~$\\mu\\Omega$--cm which is in agreement with literature.~\\cite{Liu2012}\nFor the $\\alpha$-phase the resistivity is found to be around 60~$\\mu\\Omega$--cm. \n\n\nThe measured FMR data are shown in Fig.~\\ref{FMR} for Py(30~nm)\/Ta(20~nm) bilayer structure, where Ta is grown at a growth rate of 0.62 $\\rm \\AA$\/s at which a mixed ($\\alpha$+$\\beta$) phase of Ta is formed. The raw FMR spectra are fitted with the sum of derivative of symmetric and asymmetric Lorentzian functions:~\\cite{Woltersdorf2004} \n\n\\begin{equation}\\label{Vdc}\n\\begin{split}\nV_{\\rm dc}= -2V_{\\rm sym} \\frac{\\Delta H^{2} \\small(H-H_{\\rm r})}{(\\Delta H^2+\\small(H-H_{\\rm r})^2)^2}\\\\+V_{\\rm asym} \\frac{ \\Delta H\\small(\\Delta H^2 -\\small(H-H_{\\rm r})^2)}{(\\Delta H^2+\\small(H-H_{\\rm r})^2)^2},\n\\end{split}\n\\end{equation}\n\nwhere $H$, $\\Delta H$, and $H_{\\rm r}$ are the measured field, FMR linewidth (half width at half maximum; HWHM) and resonance field, respectively. $V_{\\rm sym}$ and $V_{\\rm asym}$ are the symmetric and asymmetric amplitudes of the voltage signal, respectively. An example of FMR spectra with the fitting is shown in the inset of Fig.~\\ref{FMR}(a).\n\nFrom the fittings of FMR spectra, the linewidth $(\\Delta H)$ and the resonance field ($H_{\\rm r}$) are determined. The $H_{\\rm r}$ as a function of frequency ($\\it f$) is shown in Fig.~\\ref{FMR}(a), which was fitted with Kittel equation:~\\cite{Kittle1948}\n\\begin{equation}\\label{Kittel}\nf=\\frac{\\gamma}{2\\pi}[(H_{\\rm r}+H_{\\rm k})(H_{\\rm r}+H_{\\rm k}+4\\pi M_{\\rm eff})]^{1\/2},\n\\end{equation}\n \nwhere, $M_{\\rm eff}$ is the effective saturation magnetization and $H_{\\rm k}$ is the anisotropy field. Here, $\\gamma$=1.85$\\times10^{2}$~GHz\/T is the gyromagnetic ratio. \n\nThe Gilbert damping parameter, $\\alpha $ was calculated from the slope of the $\\Delta H$ vs. $f$ [Fig.~\\ref{FMR}(b)] by fitting with following equation:\n\\begin{equation}\\label{eq;deltah}\n\\Delta H=\\frac{2\\pi\\alpha_{\\rm eff} f}{\\gamma}+\\Delta H_{\\rm 0},\n\\end{equation}\n where $\\Delta H_{\\rm 0}$ is inhomogeneous line broadening, which is related with the film quality. In our experimental results [Fig.~\\ref{FMR}(b)], the $\\Delta H$ vs. $f$ shows a linear behavior indicating the intrinsic origin of damping parameter observed in our Py\/Ta bilayers thin films. We have also observed very small value of $\\Delta H_{\\rm 0}$ ($< 1$~mT), which further confirms the high-quality of these thin films. For quantifying spin pumping for different Ta crystalline phase, we have performed Py thickness dependence of $\\alpha_{\\rm eff}$ and $M_{\\rm eff}$ for varying crystalline phase of Ta. Figure~\\ref{SMC}(a) shows damping parameter vs. inverse of Py thickness for the different crystalline phase of Ta thin films. We then calculate the spin mixing conductance, $\\mathrm{g}_{\\uparrow \\downarrow}$ which is an important parameter that determines the spin pumping efficiency. According to the theory of spin pumping,~\\cite{Tserkvovyak2002} \n\\begin{equation}\\label{eq:spump}\n\\alpha_{\\rm eff} = \\alpha_{0}+g\\mu_{0}\\mu_{B}\\frac{\\textsl{g}_{\\uparrow\\downarrow}}{4\\pi M_{\\rm s}}\\frac{1}{t_{\\rm FM}},\n\\end{equation}\n\nwhere, $g$ and $\\mu_{B}$ are Land\\'e $g$-factor and Bohr magneton, respectively. We have calculated $\\mathrm{g}_{\\uparrow \\downarrow}$ by fitting Gilbert damping parameter $(\\alpha_{\\rm eff})$ versus inverse of Py thickness with above equation as shown in Fig.~\\ref{SMC}(a). We used $g=2.1$ for Ni$_{80}$Fe$_{20}$ for calculating $\\textsl{g}_{\\uparrow\\downarrow}.$~\\cite{Shaw2013} In Eq~(\\ref{eq:spump}), we neglected the spin back flow, since the Ta thickness we used is quite large compared to reported spin diffusion length of Ta.~\\cite{Liu2012,Emori2013,Wang2014,Kim2015,Allen2015,Nilamani2016} \n\n\\begin{figure}[t]\n\\centering\n \\includegraphics[width=8.5cm]{3_SHC.pdf}\\\\\n \\caption{(a) Effective damping constant ($\\alpha_{\\rm eff}$) vs. inverse of Py thickness, for different crystalline phases of Ta. (b) Variation of $\\mathrm{g}_{\\uparrow \\downarrow}$ with growth rate $G_{\\rm R}$ of Ta.}\\label{SMC}\n\\end{figure}\n\n\nFigure~\\ref{SMC}(b) shows the value of $\\textsl{g} _{\\uparrow\\downarrow}$ with varying growth rate of Ta thin films. Interestingly, the highest value of $\\textsl{g} _{\\uparrow\\downarrow}$ is observed for the mixed phase of Ta. In a recent study, we showed that the spin current efficiency is maximum for the mixed phase Ta using an optical technique.~\\cite{Rajni2017} Thus, the higher value of $\\textsl{g} _{\\uparrow\\downarrow}$ for mixed phase Ta is consistent with this earlier study. The spin mixing conductance, $\\textsl{g} _{\\uparrow\\downarrow}$ determines the amount of spin current injected to the non-magnetic Ta layer. A variation of $\\textsl{g} _{\\uparrow\\downarrow}$ with crystalline phase, imply a change of effective spin current injected to the Ta layer. Hence, a correlation between $\\textsl{g} _{\\uparrow\\downarrow}$ and the inverse spin Hall voltage is expected.\nFor this, we measured ISHE in these bilayers as a function of the crystalline phase of Ta thin films. The upper panel in Fig.~\\ref{ISHE}(a) shows an example of ISHE voltage signal observed for the Py\/Ta thin film for the growth rate of 0.62 $\\rm \\AA$\/s. \n\nIn our measurement, we have used a field-modulation method to enhance the sensitivity.~\\cite{tiwari2016apl} In this method, the static field is modulated with a small ac field (98~Hz) of magnitude 0.5~mT, produced by a pair of Helmholtz coils. These coils are powered by the lock-in amplifier, which also measures the voltage across the sample.\nThus, the field modulation method measures essentially the derivative signal. However, the most reported literature on ISHE uses amplitude modulation of RF signal.~\\cite{Mosendz2010,Mosendz2010PRL,Ando2011,PDeorani2013,Surbhi2017}\nHence, in the lower panel of Fig.~\\ref{ISHE}(a), we show the integrated ISHE signal for better comparison with the literature. The measured signal in our system may consist of ISHE in the Ta layer, and the AMR or AHE of the Py layer. The AMR or AHE is often assumed to produce an asymmetric Lorentzian shape while the ISHE is assumed to produce a symmetric Lorentzian shape~\\cite{Mosendz2010PRL,Ando2011,Ando2012NC,Bai2013PRL,Iguchi2017} \nso that the measured data is a sum of symmetric and asymmetric Lorentzian functions. Our measured ISHE spectra are symmetric in shape and changes sign with inversion of magnetic field direction which indicates that the voltage signal we measure may be primarily due to ISHE.~\\cite{Mosendz2010,Mosendz2010PRL,Ando2011,PDeorani2013}\n\n\\begin{figure}[t]\n \\includegraphics[width=9cm]{4_ISHE_v1.pdf}\\\\\n \\caption{(a) Measured and integrated ISHE signal at 3 GHz, for Py(30 nm)\/Ta(20 nm) with $G_{\\rm R}=0.62~\\AA$\/s. The inset shows the schematic of the ISHE voltage measurement geometry. (b) Out-of plane ($\\theta_{H}$) ISHE measurements with magnetic field applied out-of the film plane for 2~GHz of excitation frequency at RF power of 15.85~mW. Inset shows $V_{\\rm sym}$ versus $P_{\\rm RF}$ for 3~GHz. The solid line is a linear fit.}\\label{ISHE}\n\\end{figure}\n\n\nTo further verify that the measured signal is indeed from the ISHE, we measured the voltage in our samples by changing the direction of magnetic field out-of-the film plane. The measurement geometry is shown in the inset of Fig.~\\ref{ISHE}(a). Here, the out-of-plane angle ($\\theta_{\\rm H}$) is measured from the \\textit{z}-axis, so that $\\theta_{H}=0^\\circ$ corresponds to the out-of-plane direction. Figure~\\ref{ISHE}(b) shows the variation of symmetric and asymmetric voltage components with varying $\\theta_{\\rm H}$. According to Lustikova \\textit{et. al.}, the asymmetric component ($V_{\\rm asym}$) can arise due to the AMR and AHE while the symmetric component ($V_{\\rm sym}$) arises due to ISHE, as well as AMR and AHE.~\\cite{Lustikova2015} \nIn our measurements, we found $V_{\\rm asym}<